Solar module operating temperature is the second major factor affects the performance of
solar photovoltaic panels after the amount of solar radiation. This paper presents a performance
comparison of mono-crystalline Silicon (mc-Si), poly-crystalline Silicon (pc-Si), amorphous
Silicon (a-Si) and Cupper Indium Gallium di-selenide (CIGS) photovoltaic technologies under
Climate Conditions of Baghdad city. Temperature influence on the solar modules electric output
parameters was investigated experimentally and their temperature coefficients was calculated.
These temperature coefficients are important for all systems design and sizing. The experimental
results revealed that the pc-Si module showed a decrease in open circuit voltage by -0.0912V/ºC
while mc-Si and a-Si had nearly -0.07V/ºC and the CIGS has -0.0123V/ºC. The results showed
a slightly increase in short circuit current with temperature increasing about 0.3mA/ºC
,4.4mA/ºC and 0.9mA/ºC for mc-Si , pc-Si and both a-Si and CIGS. The mc-Si had the largest
drop in output power about -0.1353W/ºC while -0.0915, -0.0114 and -0.0276 W/ºC for pc-Si, aSi and CIGS respectively. The amorphous silicon is the more suitable module for high operation
temperature but it has the lowest conversion efficiency between the tested modules.
Key words: photovoltaic system, solar module, temperature effect, temperature coefficient
Post time: Feb-21-2017